Monocrystalline silicon wafer applications

Monocrystalline silicon rods are the raw materials for the production of monocrystalline silicon wafers. With the rapid increase in domestic and international market demand for monocrystalline silicon wafers, the market demand for monocrystalline silicon rods is also growing rapidly.

Monocrystalline silicon wafers are mainly used to make semiconductor components. Purpose: It is a raw material for manufacturing semiconductor silicon devices. It is used to make high-power rectifiers, high-power transistors, diodes, switching devices, etc. Nowadays, the figure and role of "silicon" can be seen everywhere in our lives. Crystalline silicon solar cells have been the most popular product in the past 15 years. Form the fastest industrialization. When molten elemental silicon solidifies, silicon atoms are arranged in a diamond lattice to form many crystal nuclei. If these crystal nuclei grow into crystal grains with the same crystal plane orientation, these crystal grains will be combined in parallel to crystallize into single crystal silicon. The manufacturing method of single crystal silicon wafers is usually to first prepare polycrystalline silicon or amorphous silicon, and then use the Czochralski method or the suspended zone melting method to grow rod-shaped single crystal silicon from the melt.

Monocrystalline silicon wafers are divided into 6 inches, 8 inches, 12 inches (300 mm) and 18 inches (450 mm) according to their diameter. The larger the diameter of the wafer, the more integrated circuits can be engraved, and the lower the cost of the chip. But large-size wafers also require higher materials and technology. According to different crystal growth methods, single crystal silicon is divided into Czochralski method (CZ), melting zone method (FZ) and epitaxial method. Single crystal silicon rods are grown by Czochralski and zone melting methods, and single crystal silicon films are grown by epitaxy. Single crystal silicon grown by the Czochralski method is mainly used in semiconductor integrated circuits, diodes, epitaxial wafer substrates, and solar cells. At present, the crystal diameter can be controlled within Φ3~8 inches. Zone melting method single crystal is mainly used in the field of high-voltage and high-power controllable rectifier devices. It is widely used in high-power power transmission and transformation, electric locomotives, rectification, frequency conversion, electromechanical integration, energy-saving lamps, televisions and other products. Currently, the diameter can be controlled In Φ3~6 inches. Epitaxial wafers are mainly used in the field of integrated circuits.