The manufacturing process of TFT is divided into six steps: hard film, cleaning, Photo, etching, stripping and testing. As shown in the picture
Film hardening process
Hard film process refers to the process of forming film on Glass (glass) by physical or chemical methods, such as Gate electrode, Data (Source/Drain) electrode, pixel electrode, insulating film, protective film and semiconductor film.
Gate Data (Source/Drain) electrode, electrode, a pixel electrode is a metal material (aluminum, chromium, molybdenum, ITO), using Sputtering (sputtering) physical method, and then Target (mainly metal) and Glass Plasma (between ion area), the Target material posted on Glass. Plasma (ion zone) is an inactive Gas implanted between two electrodes, which is applied to generate high voltage and ionize. Ionized inactive Gas strikes on the Target, and then the removed Target substance moves to Glass to form the membrane
Insulation film, protective film, a semiconductor film is the use of chemical methods (PECVD Plasma Enhanced Chemical Vapor Deposition) process, is used after the injection of Gas between the two electrodes applied high frequency power generated by Plasma (plasma), generating a Glass film on the way
Cleaning process
Cleaning process refers to the initial input or process of Glass or membrane surface pollution, Particle removal in advance, so as to avoid adverse processes. It is helpful to ensure the adhesion between film and film. The main Unit are UV cleaning Unit, Brush cleaning Unit, Mega Sonic Unit, CJ (Cavitation Jet) Unit.
Photo process
The Photo process refers to the operation of the form of Mask which is used to form the film through the light, and its morphology moves from Mask to Coating (PR), including PR coating, exposure and imaging.
Etching process
The etching process refers to the process of selectively removing the film of the photosensitive agent (PR), which is selectively removed by physical and chemical methods. There are two ways of etching: 1.Wet Etching is the etching of metal materials (aluminum, chromium, ITO, molybdenum) by chemical solution; 2.Dry Etching etching SiNx, a-Si by Gas Plasma.
Stripping process
The stripping process refers to the process of removing the Pattern (PR) left after the etching process.
The necessary condition for the membrane removal process is to completely remove the PR, the lower part of the membrane should not be damaged, but also to maintain a uniform surface state for the next process.
Detection procedure
Inspection procedure refers to the investigation / evaluation of process, semi-finished products, quality of products to determine good and bad processes.
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